Anit Joseph
Leibniz University, Germany
Title: Synthesis of gadolinium oxynitride layer on Si by nitrogen ion implantation
Biography
Biography: Anit Joseph
Abstract
As the scaling laws become less effective in boosting the performance of CMOS technology for 90 nm node and beyond, high dielectric constant(high-k) materials have attracted a great deal of interest to meet the formidable challenges for replacing the conventional silicon dioxide(SiO2) or silicon oxynitride gate insulators. Transition metal oxides and rare earth metal oxides , especially Gd2O3(Gadolinium Oxide), are now considered as the promising candidates for the next generation dielectrics. However, there are some fundamental problems associated with these high-k metal oxides. The thermal instability, poor interface with silicon, high oxide trap and interface trap densities and large leakage current become the major concerns. Recent studies demonstrated the the incorporation of nitrogen into high-k dielectric film or at the high-k dielectric interface with the Si substrate could be quite effective in suppressing crystallization of metal oxide,decreasing dopant penetration into bulk Si, inhibiting interfacial reaction with the Si substrate, and also improving both the material and electrical performance of the devices. This work reports on the formation of Gadolinium oxynitride layer by nitrogen ion implantation method.