Eui-Hyeok Yang
Stevens Institute of Technology, USA
Title: Synthesis of 2D flatlands beyond graphene
Biography
Biography: Eui-Hyeok Yang
Abstract
I will present one of our primary research topics, focusing on our development of the chemical vapor deposition (CVD)-growth of 2D materials; we develop a direct growth process to enable localized, patterned, single crystalline or large-scale polycrystalline monolayers of TMDs, including MoS2, WS2, WSe2 and MoSe2, along with their heterostructures. TMDs are emerging graphene analogues with unique properties for optoelectronic applications, but they are prone to rapid oxidation in air, presenting a critical roadblock in practical device applications. In attempts to overcome this issue of TMD oxidation, we study CVD-growth and perform extensive material characterization to illuminate the role of dissimilar 2D substrates in the prevention of interior defects in TMDs, thus uncovering the conditions for anti-oxidation. This research provides a detailed look into the oxidation and anti-oxidation behaviors of TMDs, which corroborates the role of underlying 2D layers in the prevention of interior defects in TMDs. We furthermore show the epitaxial growth of TMDs on hBN and graphene, as well as vertical/lateral heterostructures of TMDs, uniquely forming in-phase 2D heterostructures, and we examine the resulting quality and integrity of differing heterostructure. If the technique could be developed to be highly reliable and high fidelity, it could have a high impact on the future research and commercializability of TMD-based devices.